Low Noise, Cascadable Silicon Bipolar MMIC Amplifier INA-03184
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure: 2.6 dB Typical at 1.5 GHz
• High Gain: 25 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 2.5 GHz
• Unconditionally Stable (k>1)
• Low Power Dissipation: 10 mA Bias
• Low Cost Plastic Package
Description
The INA-03184 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) Typical Biasing Configuration Cblock Cbypass1 (Optional) Cblock Rbias VCC Vd = 4.0 V (Nominal) RFC (Optional) RF IN RF OUT 4 1 2 3 Note: 1. VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noise Amplifiers. feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise IF or RF amplification with minimum power consumption.
The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Typical Biasing Configuration
Note: 1. VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noise Amplifiers.
84 Plastic Package
Absolute Maximum Ratings
| Parameter | Absolute Maximum[1] |
| Device Current | 25 mA |
| Power Dissipation[2] | 200 mW |
| RF Input Power | +13 dBm |
| Junction Temperature | 150°C |
| Storage Temperature | –65 to 150°C |
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Derate at 10 mW/°C for TC > 130°C.
Stock Offer (Hot Sell)
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INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier Images
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